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2SC5820 - Silicon NPN Epitaxial Type Transistor

Key Features

  • .00 Aug 10, 2005 page 8 of 10 2SC5820 (VCE = 2 V, IC = 30 mA, ZO = 50 Ω) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000.

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Datasheet Details

Part number 2SC5820
Manufacturer Renesas
File Size 156.97 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC5820 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 (Previous ADE-208-1604A) Rev.2.00 Aug.10.2005 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “WU–“. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage www.DataSheet4U.com Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.0 1.5 35 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.