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2SC5887 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, la

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage ·Complement to Type 2SA2098 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 20 A IB Base Current-Continuous 3 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.