Datasheet Details
| Part number | 2SC5885 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 181.39 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5885_InchangeSemiconductorCompanyLimited.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5885.
| Part number | 2SC5885 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 181.39 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC5885_InchangeSemiconductorCompanyLimited.pdf |
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·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5885 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5885 | NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
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