Datasheet Details
| Part number | 2SC5887 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.52 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5887-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5887.
| Part number | 2SC5887 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.52 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5887-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage ·Complement to Type 2SA2098 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 20 A IB Base Current-Continuous 3 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5887 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5887 | NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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