High switching speed time
Low collector-to-emitter saturation voltage
Fast switching speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High-Speed Switching Applications
DC/DC Converter Applications
ABSOLUTE MAXIMUM R
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isc Silicon NPN Power Transistor
DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
120
V
50
V
9
V
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
TJ
Junction Temperature
5
A
10
A
0.5
A
1.0 W
20
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC5886A
isc website：www.iscsemi.
2SC5886A Datasheet
