Datasheet Details
| Part number | 2SC5886A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.63 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5886A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5886A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.63 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5886A-INCHANGE.pdf |
|
|
|
·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 V 50 V 9 V IC Collector Current-Continuous ICM Collector Current-peak IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ TJ Junction Temperature 5 A 10 A 0.5 A 1.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5886A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.6A;
IB= 32mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.6A;
IB= 32mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5886A | Silicon NPN Transistor | Toshiba |
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2SC5886 | NPN Transistor | Toshiba Semiconductor |
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