2SC5886A datasheet by Inchange Semiconductor.
| Part number | 2SC5886A |
|---|---|
| Datasheet | 2SC5886A-INCHANGE.pdf |
| File Size | 205.63 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.6A; IB= 32mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.6A; IB= 32mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC5886A | Silicon NPN Transistor | Toshiba |
 |
2SC5886 | NPN Transistor | Toshiba Semiconductor |
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