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2SC6082 - TO-220F NPN Transistor

General Description

Large current capacitance High speed switching Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6082 DESCRIPTION ·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 2 W 23 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.