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2SC6080 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg T.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0277 2SC6080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6080 Applications • 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.