2SC6082
Features
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Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 15 20 3 2 25 150 --55 to +150 Unit V V V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO h FE1 h FE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330m A VCE=2V, IC=10A 200 50 Ratings min typ max 10 10 560 Unit µA µA
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