2SC6082 - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg T.

Sanyo Semicon Device

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Datasheet Details

Part number	2SC6082
Manufacturer	Sanyo Semicon Device
File Size	67.70 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC6082 Datasheet
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www.DataSheet4U.com Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 Applications • 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

Published: Oct 1, 2007 |