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2SD1061 Datasheet

Manufacturer: Inchange Semiconductor
2SD1061 datasheet preview

2SD1061 Details

Part number 2SD1061
Datasheet 2SD1061-INCHANGE.pdf
File Size 210.26 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD1061 page 2

2SD1061 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4.0A ·plement to Type 2SB825 ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general high current switching as solenoid driving, high speed inverter and converter applications.

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