Datasheet4U Logo Datasheet4U.com

2SD1061 - NPN Transistor

📥 Download Datasheet

Preview of 2SD1061 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1061
Manufacturer INCHANGE
File Size 210.26 KB
Description NPN Transistor
Datasheet download datasheet 2SD1061-INCHANGE.pdf

2SD1061 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 4.0A Complement to Type 2SB825 Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general high current switching as solenoid driving, high speed inverter and converter applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co

📁 2SD1061 Similar Datasheet

  • 2SD1062 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1063 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1064 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1065 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1069 - Silicon NPN Transistor (Toshiba)
  • 2SD1000 - NPN TRANSISTOR (NEC)
  • 2SD1001 - NPN TRANSISTOR (NEC)
  • 2SD1005 - NPN SILICON EPITAXIAL TRANSISTOR (GME)
Other Datasheets by INCHANGE
Published: |