Datasheet4U Logo Datasheet4U.com

2SD1063 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A Wide Area of Safe Operation Complement to Type 2SB827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for universal high current switching as solenoid driv

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1063 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1063 SILICON POWER TRANSISTOR SavantIC
2SD1060 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1060 NPN EPITAXIAL PLANAR SILICON TRANSISTOR UTC
2SD1060 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1060 NPN Transistor
2SD1061 NPN Transistor
2SD1062 NPN Transistor
2SD1064 NPN Transistor
2SD1065 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for universal high current switching as solenoid driving, high speed inverter and converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1063 isc website：www.iscsemi.