2SD1070
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1070
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 182.85 KB