2SD1070 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1070 TC=25℃ unless otherwise specified SYMBOL PARAMETER...