Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
High DC Current Gain
: hFE= 1000(Min) @IC= 1A
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general-purpose amplifier and low-spe
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1124
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.
2SD1124 Datasheet
