| Part number | 2SD1128 |
|---|---|
| Datasheet | 2SD1128-INCHANGE.pdf |
| File Size | 183.50 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1128 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector- Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1124 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |
