Datasheet Details
| Part number | 2SD1124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1124-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1124 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1124-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1124 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
IC= 0 6 V V(BR)CBO Collector - Base Breakdown Voltage IC= 0.1mA;
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