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2SD1128 - NPN Transistor

General Description

Excellent linearity in hFE High DC Current Gain High Reliability Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color & B/W TV power supply Active power filter Industrial use power

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1128 DESCRIPTION ·Excellent linearity in hFE ·High DC Current Gain ·High Reliability ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color & B/W TV power ·supply Active power filter ·Industrial use power supply (series regulator) ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.