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2SD1236 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A Large Current Capacity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD1236 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 V 120 V 6 V IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 8 A 1.