High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1255 | Panasonic | Silicon NPN Transistor |
| 2SD1253 | Panasonic | Silicon PNP Transistor |
| 2SD1253A | Panasonic | Silicon NPN triple diffusion planar Power Transistor |
| 2SD1257A | Panasonic | Silicon NPN Transistor |
| D1257 | Panasonic | 2SD1257 |
| 2SD1251A | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD1253 | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD1253A | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD1254 | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD1256 | Kexin Semiconductor | Silicon NPN Transistor |
