Datasheet Details
| Part number | 2SD1255 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.20 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1255 Datasheet
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| Part number | 2SD1255 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.20 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1255 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SD1255 VALUE UNIT 130 V 80 V 7 V 4 A 8 A 35 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A;
IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A;
isc Silicon NPN Power Transistor.
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