Datasheet4U Logo Datasheet4U.com

2SD1255 - NPN Transistor

Datasheet Summary

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier app

📥 Download Datasheet

Datasheet preview – 2SD1255

Datasheet Details

Part number 2SD1255
Manufacturer INCHANGE
File Size 218.20 KB
Description NPN Transistor
Datasheet download datasheet 2SD1255 Datasheet
Additional preview pages of the 2SD1255 datasheet.
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SD1255 VALUE UNIT 130 V 80 V 7 V 4 A 8 A 35 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.
Published: |