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2SD1255 Datasheet Preview

2SD1255 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 3.0A
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Power amplifier applications
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SD1255
VALUE
UNIT
130
V
80
V
7
V
4
A
8
A
35
W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD1255 Datasheet Preview

2SD1255 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC=0.5A ; VCE= 10V
hFE-2Classifications
Q
P
90-180
130-260
2SD1255
MIN TYP. MAX UNIT
80
V
0.5
V
1.5
V
10 μA
50 μA
45
90
260
30
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD1255
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SD1255 Datasheet PDF





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