Collector-Emitter Breakdown Voltage
: V(BR)CEO= 150V(Min)
High Collector Power Dissipation
Complement to Type 2SB940
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifications and TV vertical
deflection o
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifications and TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1264
isc website：www.iscsemi.
2SD1264 Datasheet
