2SD1264A - Silicon NPN triple diffusion Transistor

Panasonic

Key Features

1:Base 2:Collector 3:Emitter TO.
220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT.
Conditions VCB =.
200V, IE = 0 VEB =.
4V, IC = 0 IC =.
50µA, IE = 0 IC =.
5mA, IB = 0 IE =.
500µA, IC = 0 VCE =.
10V, IC =.
150mA VCE =.

2SD1264A silicon npn triple diffusion transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD1264A
Manufacturer	Panasonic
File Size	46.40 KB
Description	Silicon NPN triple diffusion Transistor
Datasheet	2SD1264A Datasheet

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Other Datasheets by Panasonic

Part Number	Description
2SD1264	Silicon NPN Transistor
2SD1260	Silicon NPN triple diffusion Transistor
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2SD1260A	Silicon PNP Transistor
2SD1260A	Silicon NPN triple diffusion Transistor

Full PDF Text Transcription (Reference)

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Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q 16.7±0.3 14.0±0.