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2SD1264A Datasheet Silicon NPN Triple Diffusion Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q 16.7±0.3 14.0±0.5 q High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V 2SB940 2SB940A 2SB940 Collector to base voltage Collector to emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.

Key Features

  • 1:Base 2:Collector 3:Emitter TO.
  • 220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT.
  • Conditions VCB =.
  • 200V, IE = 0 VEB =.
  • 4V, IC = 0 IC =.
  • 50µA, IE = 0 IC =.
  • 5mA, IB = 0 IE =.
  • 500µA, IC = 0 VCE =.
  • 10V, IC =.
  • 150mA VCE =.

2SD1264A Distributor

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