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2SD1261 Datasheet Silicon NPN Triple Diffusion Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V 1.5±0.

Key Features

  • 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter voltage 2SD1261A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.0±0.3 6.0±0.3 V A A W.

2SD1261 Distributor

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