2SD1264 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·plement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications and TV vertical deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL...
