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2SD1264 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) High Collector Power Dissipation Complement to Type 2SB940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications and TV vertical deflection o

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Datasheet Details

Part number 2SD1264
Manufacturer INCHANGE
File Size 211.04 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1264 isc website：www.iscsemi.
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