q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Collector power TC=25°.
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Power Transistors
2SD1268
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB943
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30 W
2
Junction temperature Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.
2SD1268 Datasheet
