q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 7 12 8 45 1.3 150.
55 to +150 Unit V
1.5±0.1
1.5max. 10.5min. 2.0
1.1max. 0.8±0.1
0.5max. 2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Ba.
Full PDF Text Transcription for 2SD1262 (Reference)
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2SD1262. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 10.0±0.3 8.5±...
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peed power switching Complementary to 2SB939 and 2SB939A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 7 12 8 45 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter N Ty
2SD1262 Datasheet
