2SD1263 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1263 TC=25℃ unless otherwise specified SYMBOL PARAMETER...