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2SD1263 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) High Collector Power Dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplification applications.

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Datasheet Details

Part number 2SD1263
Manufacturer INCHANGE
File Size 190.13 KB
Description NPN Transistor
Datasheet download datasheet 2SD1263 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1263 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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