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Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
q q
Features
High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263
14.0±0.5
base voltage Collector to
Solder Dip
4.0
Collector to
16.7±0.3
7.5±0.2
1.3±0.2
emitter voltage 2SD1263A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
0.8±0.1
0.5 +0.2 –0.1
2.
2SD1263 Datasheet
