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Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching Complementary to 2SB939 and 2SB939A
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
10.0±0.3 1.5±0.1
s Features
q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1262 base voltage 2SD1262A
VCBO
60 80
Collector to 2SD1262 emitter voltage 2SD1262A
VCEO
60 80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
7 12 8 45 1.
D1262A Datasheet
