Overview: Power Transistors 2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification For TV vertical deflection output plementary to 2SB940 and 2SB940A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q q (TC=25˚C)
Ratings 200 150 180 6 3 2 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Parameter Collector to base voltage Collector to 2SD1264 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1264A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Solder Dip s Absolute Maximum Ratings 14.0±0.5 4.0 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.
