Datasheet4U Logo Datasheet4U.com

D1262 - 2SD1262

Key Features

  • q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SD1262 base voltage 2SD1262A VCBO 60 80 Collector to 2SD1262 emitter voltage 2SD1262A VCEO 60 80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO IC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D1260UK METAL GATE RF SILICON FET Seme LAB
D1263A 2SD1263A Panasonic Semiconductor
D1264 2SD1264 Panasonic Semiconductor
D1264 2SD1264 NEC
D1265 2SD1265 SavantIC

Other Datasheets by Panasonic

Part Number Description
D1262A 2SD1262A
D1257 2SD1257
D1274 2SD1274

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SD1262 base voltage 2SD1262A VCBO 60 80 Collector to 2SD1262 emitter voltage 2SD1262A VCEO 60 80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 7 12 8 45 1.