q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1266
60
VCBO
V
base voltage 2SD1266A
80
Collector to 2SD1266
60
VCEO
V
emitter voltage 2SD1266A
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
3.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D1266. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q High forward current...
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Complementary to 2SB941 and 2SB941A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1266 60 VCBO V base voltage 2SD1266A 80 Collector to 2SD1266 60 VCEO V emitter voltage 2SD1266A 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation Ta=25°C PC 35 W 2 Junction temperature Storage temperature Tj 150 Tstg
D1266 Datasheet
