The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
q q
Features
High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263
14.0±0.5
base voltage Collector to
Solder Dip
4.0
Collector to
16.7±0.3
7.5±0.2
1.3±0.2
emitter voltage 2SD1263A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
0.8±0.1
0.5 +0.2 –0.1
2.
2SD1263A Datasheet
