2SD1276 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Speed Switching ·plement to Type 2SB950 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1276 TC=25℃ unless...
