Datasheet4U Logo Datasheet4U.com

2SD1277 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for medium speed power switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1277 Silicon NPN Transistor Panasonic Semiconductor
2SD1277 SILICON POWER TRANSISTOR SavantIC
2SD1277A Silicon PNP Transistor Panasonic Semiconductor
2SD1277A SILICON POWER TRANSISTOR SavantIC
2SD1270 Silicon NPN Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1270 NPN Transistor
2SD1271 NPN Transistor
2SD1271A NPN Transistor
2SD1274 NPN Transistor
2SD1276 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 45 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1277 isc website：www.iscsemi.