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2SD1277 - Silicon NPN Transistor

Datasheet Summary

Features

  • φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150.
  • 55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2.
  • 0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.5 emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature.

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Datasheet Details

Part number 2SD1277
Manufacturer Panasonic Semiconductor
File Size 62.53 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1277 Datasheet
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Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For midium speed power switching Complementary to 2SB951 and 2SB951A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.
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