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2SD1277 - Silicon NPN Transistor

Key Features

  • φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150.
  • 55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2.
  • 0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.5 emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature.

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Datasheet Details

Part number 2SD1277
Manufacturer Panasonic
File Size 62.53 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1277 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For midium speed power switching Complementary to 2SB951 and 2SB951A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.