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2SD1289 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.65V(Typ)@IC= 5.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type 2SB966 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS A

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1289 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.65V(Typ)@IC= 5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type 2SB966 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.