2SD1286
DESCRIPTION
- With TO-251(IPAK) packaging
- Very high DC current gain
- Monolithic darlington transistor with integrated antiparallel collector-emitter diode
- plement to type 2SB963
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- AC-DC motor control
- Electronic ignition
- Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PT Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless...
