Datasheet Details
| Part number | 2SD1286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1286-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1286-INCHANGE.pdf |
|
|
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·With TO-251(IPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·plement to type 2SB963 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PT Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.Junction Temperature 60 V 60 V 8 V 1 A 2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1286 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A ,IB= 50mA VBE(sat)1 Base-Emitter Saturation Voltage IC=0.5A ,IB= 50mA ICBO Collector Cutoff Current VCB=60V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
IC= 0 hFE-1 DC Current Gain IC= 0.2A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1286-Z | NPN Transistor | NEC |
 |
2SD1286-Z | SILICON POWER TRANSISTOR | Renesas |
| Part Number | Description |
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