Datasheet Details
| Part number | 2SD1289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1289-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1289.
| Part number | 2SD1289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1289-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage : VCE(sat)= 0.65V(Typ)@IC= 5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·plement to Type 2SB966 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1289 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 5A;
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