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2SD1289 - NPN Transistor

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Part number 2SD1289
Manufacturer INCHANGE
File Size 198.66 KB
Description NPN Transistor
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Description

Low Collector Saturation Voltage : VCE(sat)= 0.65V(Typ)@IC= 5.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type 2SB966 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emit

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