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2SD1288 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Typ)@IC= 4.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Complement to Type 2SB965 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Au

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Datasheet Details

Part number 2SD1288
Manufacturer INCHANGE
File Size 198.54 KB
Description NPN Transistor
Datasheet download datasheet 2SD1288 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1288 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Typ)@IC= 4.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type 2SB965 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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