Download 2SD1288 Datasheet PDF
Inchange Semiconductor
2SD1288
DESCRIPTION - Low Collector Saturation Voltage : VCE(sat)= 0.5V(Typ)@IC= 4.0A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) - plement to Type 2SB965 - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current- Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power...