2SD1291 - NPN Transistor

Inchange Semiconductor

General Description

High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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2SD1291 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1291
Manufacturer	Inchange Semiconductor
File Size	209.93 KB
Description	NPN Transistor
Datasheet	2SD1291 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Wide Area of Safe Operation ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 13 A 65 W 130 ℃ Tstg Storage Temperature Range -55-130 ℃ 2SD1291 isc website：www.iscsemi.