2SD1409A Description
·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.