2SD1409A
2SD1409A is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High collector-emitter breakdown voltage-
: V(BR)CEO= 400V(Min)
- High DC current Gain
: h FE= 600(Min) @ IC= 2A, VCE= 2V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Igniter applications
- High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
Junction Temperature
2 W
℃
Tstg
Storage Temperature...
