| Part number | 2SD1409A |
|---|---|
| Datasheet | 2SD1409A-INCHANGE.pdf |
| File Size | 187.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1409A | NPN Transistor | Toshiba Semiconductor |
 |
2SD1409 | Silicon NPN Transistor | Toshiba |
 |
2SD1409 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1409 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1410 | Silicon NPN Darlington Power Transistor |
