Datasheet4U Logo Datasheet4U.com

2SD1415A - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1415A Silicon NPN Transistor Toshiba Semiconductor
2SD1415A SILICON POWER TRANSISTOR SavantIC
2SD1410 NPN Transistor Toshiba
2SD1410A Silicon NPN Transistor Toshiba Semiconductor
2SD1411 NPN Transistor Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1415 NPN Transistor
2SD1410 Silicon NPN Darlington Power Transistor
2SD1411 NPN Transistor
2SD1412 Silicon NPN Power Transistor
2SD1413 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.