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2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1415A
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC ICP IB
PC
120 V 100 V
6V 7
A 10 0.7 A 2.0
W 25
JEDEC JEITA
― ―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g.
2SD1415A Datasheet
