| Part | 2SD1416 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 213.25 KB |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A - High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V - Complement to Type 2SB1021 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Classic Components | 1000 | - | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| D1413 | Inchange Semiconductor | 2SD1413 |
| 2SD1418 | Kexin Semiconductor | NPN Transistors |
| D1410A | Toshiba | 2SD1410A |
| 2SD1419 | Renesas | Silicon NPN Epitaxial Transistor |
| 2SD1418 | Renesas | Silicon NPN Epitaxial Transistor |