Datasheet Details
| Part number | 2SD1416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.25 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1416-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1416 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.25 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1416-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·plement to Type 2SB1021 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1416 isc website：.iscsemi.
| Part Number | Description |
|---|---|
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1411 | NPN Transistor |
| 2SD1412 | Silicon NPN Power Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
| 2SD1415 | NPN Transistor |
| 2SD1415A | NPN Transistor |
| 2SD1417 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |