| Part | 2SD1413 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 208.49 KB |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A - High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V - Complement to Type 2SB1023 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| D1413 | Inchange Semiconductor | 2SD1413 |
| 2SD1413 | Toshiba | BJT Transistor |
| 2SD1418 | Kexin Semiconductor | NPN Transistors |
| D1410A | Toshiba | 2SD1410A |
| 2SD1418 | Renesas | Silicon NPN Epitaxial Transistor |
