Datasheet Details
| Part number | 2SD1413 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.49 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1413-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1413 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.49 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1413-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to Type 2SB1023 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Hammer driver,pulse motor driver applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1413 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1413 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
| Part Number | Description |
|---|---|
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