Datasheet Details
| Part number | 2SD1411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1411-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1411.
| Part number | 2SD1411 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1411-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·plement to Type 2SB1018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1411 | NPN Transistor | Toshiba |
 |
2SD1411 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1411A | NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1412 | Silicon NPN Power Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
| 2SD1415 | NPN Transistor |
| 2SD1415A | NPN Transistor |
| 2SD1416 | Silicon NPN Darlington Power Transistor |
| 2SD1417 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |