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2SD1411 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Complement to Type 2SB1018 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applica

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Datasheet Details

Part number 2SD1411
Manufacturer INCHANGE
File Size 211.32 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1018 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.
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