| Part Number | 2SD1411 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRI. ain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=4A ;IB=0.4A IC=4A ;IB=0.4A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V VCE=4V;IC=1A f=1MHz ; VCB=10V;IE=0 70 30 MIN 80 2SD1411 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO. |
2SD1411 Datasheet and Specifications PDF
The 2SD1411 is a SILICON POWER TRANSISTOR.
| Part Number | 2SD1411 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1018 ·Minimum Lot-to-Lot variations for robust device. BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current G. |
| Part Number | 2SD1411 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Toshiba |
| Overview | : 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at. . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic 80 Base Current Collec. |