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2SD1411
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES
. Low Saturation Voltage : vCE(sat)=0.5V(Max.)
. Complementary to 2SB1018
at I C=4A
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
80
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
IB
2.0 30
1. BASE 2. COLLECTOR 3 EMITTER
Junction Temperature
150
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
-55-150
TOSHIBA
2-10L1A
Weight : 2.1g
TEST CONDITION
MIN. TYP. MAX.
2SD1411 Datasheet
