Datasheet Summary
:
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
Features
. Low Saturation Voltage : vCE(sat)=0.5V(Max.)
. plementary to 2SB1018 at I C=4A
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
2.0 30
1. BASE 2. COLLECTOR 3 EMITTER
Junction Temperature
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
-55-150
TOSHIBA
2-10L1A
Weight : 2.1g
TEST...
