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2SD1410A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 300 V
Collector-emitter voltage
VCEO 250 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 6 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.
2SD1410A Datasheet
