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2SD1410 - NPN Transistor

Key Features

  • . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A).

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Datasheet Details

Part number 2SD1410
Manufacturer Toshiba
File Size 89.38 KB
Description NPN Transistor
Datasheet download datasheet 2SD1410 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO 300 VcEO 250 Vebo 5 ic 6 IB PC T J T stg 1 2.0 25 150 -55-150 COLLECTOR UNIT V V V A A W °C °C 1 1. BASE 2. COLLECTOR 3. EMITTER TOSHIBA 2-10L1A Weight : 2.1g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.