• Part: 2SD1410
  • Description: NPN Transistor
  • Manufacturer: Toshiba
  • Size: 89.38 KB
Download 2SD1410 Datasheet PDF
2SD1410 page 2
Page 2

Datasheet Summary

SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. Features . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO VcEO Vebo 5 ic 6 IB PC T stg 2.0 25 -55-150 COLLECTOR...