Datasheet Summary
:
SILICON NPN TRIPLE DIFFUSED TYPE
- 2SD1412
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
Unit in mm
10.3MAX. 7.0 03.2±O.2
Features
. Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . plementary to 2SB1019 at Ic=4A
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VcBO VCEO VeBO
RATING 70 50
UNIT
- sJ
Ii-t Je5
O iri
0> CS
+1 o s Hto
N' 1.4
+ 0.25 id Q76-ai5 , II i
- 2.54±0.25
2.54±a25
»M s
CiC5
+1
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25 C
Junction...
