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SILICON NPN TRIPLE DIFFUSED TYPE
*
2SD1412
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
Unit in mm
10.3MAX. 7.0 03.2±O.2
FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019
at Ic=4A
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VcBO VCEO VeBO
RATING 70 50
UNIT
*sJ
Ii-t Je5
O
iri
0> CS
+1
o s Hto
1
1.2
N' 1.4
+ 0.25 id Q76-ai5 , II i
—2.54±0.25
2.
2SD1412 Datasheet
