| Part Number | 2SD1412 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | : SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(M. . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VCEO VeBO RATING 70 50 UNIT *sJ Ii-t Je5 O iri 0> CS +1 o s Hto 1 1.2 N' 1.4 + 0.2. |
2SD1412 Datasheet and Specifications PDF
The 2SD1412 is a NPN Transistor.
| Part Number | 2SD1412 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device. R)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gai. |